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| PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 2 JUNE 94 FEATURES * 4.5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * High gain * Spice model available ZTX968 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg -15 -12 -6 -20 -4.5 1.58 1.2 E-Line TO92 Compatible VALUE UNIT V V V A A W W C -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) -50 -100 -220 -930 -830 MIN. -15 -12 -6 TYP. -28 -20 -8 -50 -1 -10 -100 -150 -300 -1050 -1000 MAX. UNIT V V V nA nA mV mV mV mV mV CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-12V VCB=-12V, Tamb=100C VEB=-6V IC=-500mA, IB=-5mA* IC=-2A, IB=-50mA* IC=-5A, IB=-200mA* IC=-5A, IB=-200mA* IC=-5A, VCE=-1V* A VBE(sat) VBE(on) 3-333 ZTX968 ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER Static Forward Current Transfer Ratio SYMBOL hFE MIN. 300 300 200 150 TYP. 450 450 300 240 50 80 161 120 116 MAX. 1000 UNIT CONDITIONS. IC=-10mA, VCE=-1V* IC=-500mA, VCE=-1V* IC=-5A, VCE=-1V* IC=-10A, VCE=-1V* IC=-20A, VCE=-1V* MHz pF ns ns IC=-100mA, VCE=-10V f=50MHz VCB=-20V, f=1MHz IC=-4A, IB1=-400mA IB2=400mA, VCC=-10V Transition Frequency Output Capacitance Switching Times fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% THERMAL CHARACTERISTICS PARAMETER Thermal Resistance: Junction to Ambient Junction to Case SYMBOL Rth(j-amb) Rth(j-case) MAX. 150 50 UNIT C/W C/W Max Power Dissipation - (Watts) 4.0 Thermal Resistance (C/W) 150 t1 D.C. D=t1/tP 3.0 Ca se 100 te tP D=0.6 2.0 m 1.0 Amb ient te mpe ratu -40 -20 0 20 40 pe ra tu re 50 D=0.2 D=0.1 re 60 80 100 120 140 160 180 200 0 0.0001 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-334 ZTX968 TYPICAL CHARACTERISTICS 0.8 +25 C 0.8 I+/I*=50 0.6 0.4 I+/I*=250 I+/I*=200 I+/I*=100 I+/I*=50 I+/I*=10 0.6 0.4 +100 C +25 C -55 C 0.2 0 1m 0.2 0 10m 100m 1 10 100 1m 10m 100m 1 10 100 IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC 800 V+-=1V +100 C VCE(sat) v IC 1.6 1.2 I+/I*=50 -55 C +25 C +100 C 600 400 +25 C 0.8 -55 C 200 0 0.4 0 10m 100m 1 10 100 1m 10m 100m 1 10 100 1m IC - Collector Current (A) hFE v IC IC - Collector Current (A) VBE(sat) v IC -55 C +25 C +100 C I - Collector Current (Amps) 1.4 100 V+-=1V Single Pulse Test at Tamb=25C 10 0.7 D.C. 1s 100ms 1 10ms 1.0ms 0.1ms 0 1m 10m 100m 1 10 100 IC - Collector Current (A) 0.1 0.1 VBE(on) v IC VCE - Collector Emitter Voltage (V) 1 10 100 Safe Operating Area |
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